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IR Image Furnace
SC1, SC2

SC1, SC2
  • Overview
  • Specifications

Basic Information

Model name : SC1, SC2

Elliptical reflecting mirror image furnace using a lamp as a light and heat source.

Applications

Oxide high temperature superconductor single crystal growth

Dielectric and magnetic material single crystal growth

Pure metal and metallic compound single crystal growth

Features

1.Enables crystal growth free from outside contamination.

2.Atmosphere and pressure can be changed during crystal growth

3.View screen enables monitoring of crystal growth process.

Main Specs

Model No.
SC1
MDH11020 MDH20020
Temp range
Max. 2050°C
1.5kW × 2pcs (Standard)		 Max. 2150°C
3.5kW × 2pcs (Standard)
Furnace
Type Dual elliptical reflector
Size Standard (Medium)
Crystal growth (example)
φ6 (Al2O3 + Cr2O3) φ8 (MgAl2O4 + CoO)
Spindle drive
Lower stroke 150mm
Upper stroke 250mm
Crystal growth (low speed) 0.5-50mm/hour
Gap adjustment (middle speed) 1-300mm/min
Preparatory operation (high speed) 300mm/min
Rotation rate 5-60rpm
Lamp power
Power supply DC110V, 20A × 2sets DC200V, 20A × 2sets
DC power supply 0.005% of span + 3mV
Total stability ±0.1% of span
Atmosphere
Pressure Max. 300kPa (970 kPa option)
Flow rate 0.5-5 L/min N2 Gas (Flow meter included)
Dimensions
Main unit (W) 1,140 × (D) 1,170 × (H) 2,250 mm
PC rack (W) 600 × (D) 625 × (H) 1,200 mm
DC power supply Built into main unit
Control box Built into main unit
Ceiling height (mm)
Approx. 2,700 mm
Power requirements
Power supply (50/60 Hz) φ3 AC200V 60A φ3 AC200V 75A
Water Approx. 5–8 L/min
Model No.
SC2
EDH11020 MDH11020 MDH20020
Temp range
Max. 2050°C
1.5kW × 2pcs (Standard)		 Max. 2150°C
3.5kW × 2pcs (Standard)
Furnace
Type Dual elliptical reflector
Size Small (E) Standard (Medium)
Crystal growth (example)
φ6 (Al2O3 + Cr2O3) φ8 (MgAl2O4 + CoO)
Spindle drive
Lower stroke 150mm
Upper stroke ±25mm
Crystal growth (low speed) 1.0-20mm/hour
Gap adjustment (middle speed) Low speed : 0.15-2.9mm/hour; High speed : 22mm/min
Preparatory operation (high speed) 100mm/min
Rotation rate 5-60rpm (50Hz)
Lamp power
Power supply DC110V, 20A × 2sets DC200V, 20A × 2sets
DC power supply 0.005% of span + 3mV
Total stability ±0.1% of span
Atmosphere
Pressure Max. 300kPa (970 kPa option)
Flow rate 0.5-5L/min N2 Gas (Flow meter included)
Dimensions
Main unit (W) 1,000 × (D) 1,000 × (H) 1,800 mm
PC rack (W) 600 × (D) 625 × (H) 1,200 mm
DC power supply (W) 630 × (D) 510 × (H) 700 mm × 1 set (W) 430 × (D) 500 × (H) 610 mm × 2 sets
Control box Built into main unit
Ceiling height
Approx. 2,400 mm
Power requirements
Power supply (50/60 Hz) φ3 AC200V 60A φ3 AC200V 75A
Water Approx. 5–8 L/min

Options

Name
Description
Hydrostatic press unit
Ideal hydraulic press and mold for creating rods from raw material.
Mass flow controller
Mass flow controllers enable the mixing of two kinds of gases when growing a single crystal.
Cold trap
This unit can be used to trap evaporated materials and reduce devitrification of the quartz tube, enabling the growth of a single crystal without loss of heating performance.
Use of this unit is extremely effective when evaporation of molten raw material is noticeable.

[Results]
Without the cold trap, it may be necessary to frequently adjust lamp power during crystal growth due to the eventual contamination of the quartz tube. The cold trap improves the stability of crystal-growth conditions by keeping the quartz tube clean.

The cold trap helps prolong quartz tube usage, which reduces running costs.
Example: Growth of single Sr2RuO4crystals
Without cold trap: Quartz tube was able to be used 4–5 times.
Using Cold trap: Quartz tube was able to be used more than 10 times.
Example: Growth of single Sr3Ru2O7crystals
Without cold trap: Quartz tube was able to be used 2–3 times.
Using Cold trap: Quartz tube was able to be used 8–9 times.